#: locale=de ## Action ### URL LinkBehaviour_6788E969_73E4_6FEC_41C2_84D56E249EDB.source = https://www.tu-ilmenau.de/forschung/forschungsaktivitaeten/institute-und-technologische-zentren/zentrum-fuer-mikro-und-nanotechnologie ## Hotspot ### Tooltip FlatHotspotPanoramaOverlayArea_2D6E0E3B_3DB0_86FF_41CB_0825A4AAF7B1.toolTip = Analytics Lab FlatHotspotPanoramaOverlayArea_EFD80CD9_FA06_C469_41D8_B0D6BC65E69F.toolTip = Exit FlatHotspotPanoramaOverlayArea_EFDAF956_FA06_CC7B_41E8_B68BEB144872.toolTip = Exit FlatHotspotPanoramaOverlayArea_570C8935_59D3_0AB9_41C9_5D3FB867BA77.toolTip = Exit FlatHotspotPanoramaOverlayArea_E36C6696_FA02_44F8_41A9_6CF83A797F76.toolTip = Exit FlatHotspotPanoramaOverlayArea_571A5326_59D3_1E58_41D4_35C85A9F4E95.toolTip = Exit FlatHotspotPanoramaOverlayArea_D5909CCB_DA3B_1C84_41DA_BEC86CB02AD3.toolTip = Exit FlatHotspotPanoramaOverlayArea_E9C081FC_FA01_DC2F_41BA_74D2C20FAA03.toolTip = Go outside FlatHotspotPanoramaOverlayArea_4B9D7AE0_5960_552D_41D0_FC3B5A55CC91.toolTip = Go to cleanroom FlatHotspotPanoramaOverlayArea_E806A339_FA01_DC29_41E8_D88A701E3723.toolTip = Go to cleanroom FlatHotspotPanoramaOverlayArea_4B591748_5960_7BC9_41B2_1B3B97C1F6BF.toolTip = Have a look at the technology behind the clean room FlatHotspotPanoramaOverlayArea_4B45A0BA_5960_754B_41D0_8CC9E32BDE2E.toolTip = Have a look at the technology behind the clean room FlatHotspotPanoramaOverlayArea_4B593177_5960_D7D8_41B3_E1161E3E52C8.toolTip = Have a look at the technology behind the clean room FlatHotspotPanoramaOverlayArea_4BC55214_5960_D528_41B2_D703876326D6.toolTip = Have a look at the technology behind the clean room HotspotPanoramaOverlayArea_5DE9258C_5262_9995_41CE_E4C57E65F3F8.toolTip = High Temperature Lab FlatHotspotPanoramaOverlayArea_EB087CC6_FA06_445A_41E0_D8689408A22E.toolTip = Jump to Meitnerbau cleanroom FlatHotspotPanoramaOverlayArea_2C761459_3DB0_FABB_419A_531EFB846B7E.toolTip = Jump to Meitnerbau cleanroom FlatHotspotPanoramaOverlayArea_2C215411_3DB3_9A8B_41C7_3D87B61E0455.toolTip = Jump to ZMN cleanroom HotspotPanoramaOverlayArea_4B780B58_5960_CBC0_41A6_2BF117EB7626.toolTip = Jump to ZMN cleanroom building FlatHotspotPanoramaOverlayArea_5D58A027_527E_9693_41CB_9264FA8B6903.toolTip = Lithography Lab FlatHotspotPanoramaOverlayArea_432D9327_5222_9A93_41BE_EE6BC0329241.toolTip = Lithography Lab FlatHotspotPanoramaOverlayArea_5CBCE06F_5263_9693_41B4_FF40D6351E06.toolTip = Plasma Technology Lab FlatHotspotPanoramaOverlayArea_5CA39C61_5262_AE8F_41C8_65F1823BCAB7.toolTip = Wet Chemistry Lab ## Media ### Title photo_4E808327_59E3_FB82_41D4_96E7E34C6496.label = Ardenne photo_4CB4B12C_59E0_7784_41D0_03A159C45776.label = Beneq_ALD photo_56325C19_59D3_0A68_41AB_497683D02D01.label = DSC07308 photo_4E305E1F_5921_CDAC_41CE_14C5E0D85BD6.label = Dektak photo_4116D855_5920_55BC_41D2_AD31DADDC6D2.label = Ellipsometer photo_79EDD7E1_7324_E31D_41A0_0826AF88BF02.label = Estrelas 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Lorem ipsum dolor sit amet, consectetur adipiscing elit, sed do eiusmod tempor incididunt ut labore et dolore magna aliqua. Ut enim ad minim veniam, quis nostrud exercitation ullamco laboris nisi ut aliquip ex ea commodo consequat. Duis aute irure dolor in reprehenderit in voluptate velit esse cillum dolore eu fugiat nulla pariatur. Excepteur sint occaecat cupidatat non proident, sunt in culpa qui officia deserunt mollit anim id est laborum
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The furnaces in the lithography section are for the removal of moisture and volatile components on the sample surface. Furthermore, an oven for processing FDTS is available in the PDMS laboratory.
1. Memmert furnace 1 Lithography:
Standard temperature at 1O5°C
2. Memmert furnace 2 Lithography:
Standard temperature 250°C
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.. is a system for reactive ion etching for several fields of application. The plasma required for this is generated by inductive excitation - lnductive Coupled Plasma (ICP). The technical equipment enables two special processes, cryo-etching and etching in the nanometre range.
lt is possible to cool the substrate down to -120°( using liquid nitrogen. This allows structures with smooth side walls to be created in the silicon.
In addition to the usual process gases such as 02, Ar, SF6 and other fluorine-containing gases, helium is also available. Helium enables the creation of a plasma that has no etching effect. Small amounts of e.g. SF6 and 02 are mixed into this and silicon can be etched at very low etch rates of 5 nmOmin-1 . Thus, a process with which very small structures are to be produced can also be controlled.
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.. is a system for reactive ion etching for several fields of application. The plasma required for this is generated by inductive excitation - lnductive Coupled Plasma (ICP). The technical equipment enables two special processes, cryo-etching and etching in the nanometre range.
lt is possible to cool the substrate down to -120°( using liquid nitrogen. This allows structures with smooth side walls to be created in the silicon.
In addition to the usual process gases such as 02, Ar, SF6 and other fluorine-containing gases, helium is also available. Helium enables the creation of a plasma that has no etching effect. Small amounts of e.g. SF6 and 02 are mixed into this and silicon can be etched at very low etch rates of 5 nmOmin-1 . Thus, a process with which very small structures are to be produced can also be controlled.
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... is a system for deep silicon etching by the gas exchange process. Our ''Drill" for silicon among the plasma etching systems - up to 12 µm2min-1 etch rate.
Silicon is structured by reactive ion etching. The plasma required for this is generated by inductive excitation -lnductive Coupled Plasma. The etching process is supported by an additional RF potential at the electrode on which the substrate lies. For this purpose, a choice can be made on the system between an HF and an LF generator. The pulsed LF generator avoids "notching" and steep walls can be generated.
Plasma generation takes place in a small-diameter ceramic tube that is spatially separated from the reaction chamber (remote source). The etching process is dominated by radicals and is therefore more effective, i.e. faster.
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A digestorium, also called a fume hood, is used to work safely, especially in the chemical industry, and to protect the operator.
This fume hood consists of a fire- and chemical-resistant work surface enclosed by solid walls, a movable front window for access to the work surface, and an adapted ventilation system used to immediately extract gases, dusts, and aerosols generated during experiments from the air.
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A horizontal swivel is used for the uniform transport and continuous mixing of an etching solution in the orded to be able to carry out an etching process under almost constant conditions.
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A large part of the process sections start and/or end with wet chemical steps. The wet chemistry section of the center allows for a variety of cleaning processes (RCA + NlA, Caro, solvent cleaning, Tickopur/Stammopur, HF/BOE, ... ) as weil as substrate and layer etching (Si and its compounds as well as all common metals). In addition, lift-off as well as lacquer-strip processes are carried out.
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A large part of the process sections start and/or end with wet chemical steps. The wet chemistry section of the center allows for a variety of cleaning processes (RCA + NlA, Caro, solvent cleaning, Tickopur/Stammopur, HF/BOE, ... ) as weil as substrate and layer etching (Si and its compounds as well as all common metals). In addition, lift-off as well as lacquer-strip processes are carried out.
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A mask aligner ("mask aligner") is a system that can accurately position masks for photolithography. Exposure causes the image of the photomask to be transferred to the photosensitive layer by casting shadows. The resulting lithographic mask enables further chemical and physical processes (etching of recesses, insertion and application of materials into the windows formed by lithography and subsequent dissolution of the exposed or unexposed resist). The MA8e at ZMN is a manual mask aligner for substrate sizes up to 8 inches and double­sided processing for front and back alignment.
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A mask aligner ("mask aligner") is a system that can accurately position masks for photolithography. Exposure causes the image of the photomask to be transferred to the photosensitive layer by casting shadows. The resulting lithographic mask enables further chemical and physical processes (etching of recesses, insertion and application of materials into the windows formed by lithography and subsequent dissolution of the exposed or unexposed resist). The MA8e at ZMN is a manual mask aligner for substrate sizes up to 8 inches and double­sided processing for front and back alignment.
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A scanning electron microscope (SEM) is an electron microscope in which an electron beam is passed in a specific pattern over the object to be magnified and interactions of the electrons with the object are used to produce an image of the object. The scanning electron microscope from Hitachi is a high-resolution device and is primarily used for process control in the clean room. lt can be used to examine surface and X-section structures in the range above 1 nm. This SEM is also suitable for the investigation of chemical composition.
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Coating system based on metal-organic chemical vapor deposition (MOCVD) for the growth of crystalline layers. The coating is carried out by means of a gaseous precursor, which is fed into a reaction chamber where it reacts with other substances or the substrate tobe coated and forms a solid layer.
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Coating system based on metal-organic chemical vapor deposition (MOCVD) for the growth of crystalline layers. The coating is carried out by means of a gaseous precursor, which is fed into a reaction chamber where it reacts with other substances or the substrate tobe coated and forms a solid layer.
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Double chamber system with an etching chamber and a coating chamber inparallel plate configurationfor experimental processes. Both reactors are direct opening.
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Flexible spray processor with rotating subsrate holder and megasonic nozzle for cleaning processes in lithography for masks and substrates.
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Flexible sputter deposition system for the deposition of thin films of metals, metal oxides, and nitrides as tunnel barriers, electrodes, and active layers in memristive and cryoelectronic devices.
The cluster is equipped with two coating chambers witih 3 sources each as well as a plasma chamber for surface conditioning and controlled oxidation of deposited layers, a load lock and a central handler.
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Flexible sputter deposition system for the deposition of thin films of metals, metal oxides, and nitrides as tunnel barriers, electrodes, and active layers in memristive and cryoelectronic devices.
The cluster is equipped with two coating chambers witih 3 sources each as well as a plasma chamber for surface conditioning and controlled oxidation of deposited layers, a load lock and a central handler.
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ICP Mulitplex ASE Fluor is a plasma etc hing system with inductively coupled plasma (ICP) for fluorine­based et chi ng processes. This system is used pu rely for etching silicon and can therefore only be used with the substrate material silicon.
As a dry etching system, it is characterized by a high degree of anisotropy. This allows a very accurate transfer of the mask structure to be achieved. The processes used are based on the generation of a plasma - i.e. ionized gas. The particles moving in the plasma (they are non-ionized molecules, radicals and ions) strike the surface and interact with it.
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ICP Multiplex Chlorine (STS) is a plasma etching system with inductively coupled plasma (ICP) for chlorine-based etching processes. Process materials are group 111 nitrides (e.g. GaN, AllnN, AIGaN, AIN, ScAIN), lnO, MoS2. Silicon and glass wafers serve as substrates. As a dry etching system, it is characterized by a high degree of anisotropy. Thus, a very accurate transfer of the mask structure can be achieved. The processes used are based on the generation of a plasma - i.e. ionized gas. The particles moving in the plasma (they are non-ionized molecules, radicals and ions) strike the surface and interact with it.
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In photolithography, a photosensitive layer is required on the substrate to enable pattern transfer. This so-called resist, or photoresist, is applied in liquid form. The sample is spun in this process. This creates a thin, homogeneous film.
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In the maskless lithography of the MlA 150, structures are written onto a substrate (e.g. wafer) coated with a photosensitive resist by means of UV laser radiation. For imaging, a micromirror array is used, as it is also used in beamers. Here, however, a greatly reduced image is projected onto the substrate. By eliminating the need for a mask, cycle times are significantly reduced, since any design change can be implemented quickly by simply changing the CAD layout.
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In the maskless lithography of the MlA 150, structures are written onto a substrate (e.g. wafer) coated with a photosensitive resist by means of UV laser radiation. For imaging, a micromirror array is used, as it is also used in beamers. Here, however, a greatly reduced image is projected onto the substrate. By eliminating the need for a mask, cycle times are significantly reduced, since any design change can be implemented quickly by simply changing the CAD layout.
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LPCVD (low pressure chemical vapor deposition) is a low pressure gas phase process for depositing thin films. The substrate to be coated is exposed to one or more gaseous precursors, which react with the surface and/or
decompose there. The LPCVD LS250 in the ZMN is used to produce doped polysilicon, undoped polysilicon, silicon nitride and silicon oxide.
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LPCVD (low pressure chemical vapor deposition) is a low pressure gas phase process for depositing thin films. The substrate to be coated is exposed to one or more gaseous precursors, which react with the surface and/or
decompose there. The LPCVD LS250 in the ZMN is used to produce doped polysilicon, undoped polysilicon, silicon nitride and silicon oxide.
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LPCVD (low pressure chemical vapor deposition) is a low pressure gas phase process for depositing thin films. The substrate to be coated is exposed to one or more gaseous precursors, which react with the surface and/or
decompose there. The LPCVD LS250 in the ZMN is used to produce doped polysilicon, undoped polysilicon, silicon nitride and silicon oxide.
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Multifunctional parameter measurement station for electrical charactrisation of layers with four-tip arrangeement and for device characterisation with flexible probe tips. Control is via predefined measurement programs by PC.
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Multifunctional parameter measurement station for electrical charactrisation of layers with four-tip arrangeement and for device characterisation with flexible probe tips. Control is via predefined measurement programs by PC.
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Nikon ECLIPSE L200N is a darkfield optical microscope for exceptionally precise optical inspection of wafers (200 mm for L200N series), photomasks and other substrates. Nikon ECLIPSE L200N is a darkfield optical microscope for exceptionally precise optical inspection of wafers (200 mm for L200N series), photomasks and other substrates.
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Nikon ECLIPSE L200N is a darkfield optical microscope for exceptionally precise optical inspection of wafers (200 mm for L200N series), photomasks and other substrates. Nikon ECLIPSE L200N is a darkfield optical microscope for exceptionally precise optical inspection of wafers (200 mm for L200N series), photomasks and other substrates.
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Our new ICP atomic layer etching system is used for self-limiting, sequential plasma-assisted atomic layer etching
The precision possible in this process is needed to precisely adjust the thickness of so-called barrier layers through which electrons can tunnel by quantum effects.
We want to use these effects to develop a new type of electronic device. lnspired by the biology of the human brain, these neuromorphic electronics will rigorously push the boundaries of current microelectronic system concepts in terms of signal processing speed and energy efficiency.
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Our new ICP atomic layer etching system is used for self-limiting, sequential plasma-assisted atomic layer etching
The precision possible in this process is needed to precisely adjust the thickness of so-called barrier layers through which electrons can tunnel by quantum effects.
We want to use these effects to develop a new type of electronic device. lnspired by the biology of the human brain, these neuromorphic electronics will rigorously push the boundaries of current microelectronic system concepts in terms of signal processing speed and energy efficiency.
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Plasma Enhanced Chemical Vapeur Deposition (PECVD) stands for plasma-enhanced chemical vapour deposition and is a special form of CVD in which the deposition of thin films takes place by chemical reaction as in the CVD process and is supported by a plasma. ICP-PECVD in the ZMN is used for the deposition of SiOx, SiNx and amorphous silicon.
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Plasma asher for the removal of organic layers and contaminations with microwave excitation. Metal structures can act as antennas and lead to local overheating.
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Plasma asher for the removal of organic layers and contaminations with microwave excitation. Metal structures can act as antennas and lead to local overheating.
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Rapid thermal processing or rapid thermal annealing (RTP/RTA) is a heat treatment in which a material is heated to very high temperatures (up to approx 1000°C) in seconds by heat radiation and cools down again very quickly after the radiation is switched off. A field of halogen radiators is usually used to generate the heat radiation. The rapid thermal treatment can, for example, "heal" defects in the crystal lattice or cause thermal transformation processes in the material structure. lf the thermal treatment does not take place under inert gas or in a vacuum, but reactive gases such as oxygen are used, a chemical transformation can also take place on the surface.
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Semiconductor production takes place in clean rooms in order to protect the highly complex circuits of the semiconductor components from impurities that can affect the functionality of the components. The air in clean rooms is cleaned by so-called ultra-fine filters and then introduced through the ceiling. The air is extracted through holes in the floor so that this laminar flow removes particles from the top down through the-floor.
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System for thermal and plasma-assisted atomic layer deposition. The layer deposition takes place in a separately heated reaction chamber, which leads to a uniform temperature distribution and protects the vacuum chamber from unwanted coating. The process gas and precursor flow occurs horizontally over the substrate. Depositions are possible in both thermal and plasma assisted modes. Different reaction chambers are used for both thermal and plasma-assisted modes. To use the plasma mode, the plasma source must be installed separately. Substrates can be introduced into the system via an airlock with a manual handling system (without vacuum break of the reaction chamber).
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System for thermal and plasma-assisted atomic layer deposition. The layer deposition takes place in a separately heated reaction chamber, which leads to a uniform temperature distribution and protects the vacuum chamber from unwanted coating. The process gas and precursor flow occurs horizontally over the substrate. Depositions are possible in both thermal and plasma assisted modes. Different reaction chambers are used for both thermal and plasma-assisted modes. To use the plasma mode, the plasma source must be installed separately. Substrates can be introduced into the system via an airlock with a manual handling system (without vacuum break of the reaction chamber).
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The Dektak 150 profilometer is a tactile surface profilometer that can be used to measure roughness, surface profile, topography or layer thickness on steps using a needle tlp. The needle tip presses with a defined force on the sample, which is moved over a distance x at a defined speed. The system registers the raising and lowering of the needle in the z direction.
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The Dektak 150 profilometer is a tactile surface profilometer that can be used to measure roughness, surface profile, topography or layer thickness on steps using a needle tlp. The needle tip presses with a defined force on the sample, which is moved over a distance x at a defined speed. The system registers the raising and lowering of the needle in the z direction.
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The Dektak 150 profilometer is a tactile surface profilometer that can be used to measure roughness, surface profile, topography or layer thickness on steps using a needle tlp. The needle tip presses with a defined force on the sample, which is moved over a distance x at a defined speed. The system registers the raising and lowering of the needle in the z direction.
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The EVG101 spray coater from EVGroup is used to coat non-planar substrates. lnstead of spinning photoresist onto the substrate, the pre-thinned resist is atomized by an ultrasonic nozzle and sprayed onto the slowly rotating substrate. The system enables homogeneous resist layers to be applied to profiled or deeply structured surfaces, which cannot be achieved with conventional spin coating. On flat wafer surfaces, a film thickness homogeneity of less than 3% on average and a roughness of less than 1O nm can be achieved. With multiple coating, up to 1OOµm can be sprayed on. Furthermore, curved surfaces, as well as any deep or less deep structures on substrates of different materials, can be coated.
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The FLX 2908 stress measurement station (Tencor) is used to determine the change in substrate curvature caused by a coating, which is induced by a mechanical stress. For measurement, the sample surface is scanned with a laser beam. The sample surface reflects the bearri, which is received by a position-sensitive detector. The average radius of curvature of the sample is determined from the local positions of the reflected laser beam in the position sensitive detector.
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The FLX 2908 stress measurement station (Tencor) is used to determine the change in substrate curvature caused by a coating, which is induced by a mechanical stress. For measurement, the sample surface is scanned with a laser beam. The sample surface reflects the bearri, which is received by a position-sensitive detector. The average radius of curvature of the sample is determined from the local positions of the reflected laser beam in the position sensitive detector.
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The RIE Plasmalab100 (Oxford) is a capacitively coupled plasma etching system for fluorine-based etching processes of silicon, SiO2, Si3N4, alpha-silicon, Nb, Mo, MoSi, TiO, Cr, W, Ta, HfO, diamond on glass or silicon wafers.
As a dry etching system, it is characterized by a high degree of anisotropy. Thus, a very accurate transfer of the mask structure can be achieved. The processes used are based on the generation of a plasma - i.e. ionized gas. The particles moving in the plasma (they are non-ionized molecules, radicals and ions) strike the surface and interact with it.
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The Tempress oxidation system is a horizontal furnace for processing silicon wafers. Thermal oxidation of silicon is achieved by heating the wafer to a high temperature, usually 900°C to 1100°C, in an atmosphere containing either pure oxygen (dry oxidation) or water vapor (wet oxidation). The oxygen arriving at the silicon surface can then combine with the silicon to form silicon dioxide.
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The Tempress oxidation system is a horizontal furnace for processing silicon wafers. Thermal oxidation of silicon is achieved by heating the wafer to a high temperature, usually 900°C to 1100°C, in an atmosphere containing either pure oxygen (dry oxidation) or water vapor (wet oxidation). The oxygen arriving at the silicon surface can then combine with the silicon to form silicon dioxide.
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The center's wet-chemistry line enables both diverse cleaning processes and etching of substrates or functional layers at wafer as well as chip level (wafer: 2''<= d <= 6"; chip: >=5x5mm²). The following operations can be performed in this lab: Cleaning, etching, lift-offs as well as resist stripping. For cleaning, the wafers are rinsed in ultrapure water after each wet chemical process step. For isotropic and anisotropic etching, special clothing is required in the wet chemical area of a clean room.
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The center's wet-chemistry line enables both diverse cleaning processes and etching of substrates or functional layers at wafer as well as chip level (wafer: 2''<= d <= 6"; chip: >=5x5mm²). The following operations can be performed in this lab: Cleaning, etching, lift-offs as well as resist stripping. For cleaning, the wafers are rinsed in ultrapure water after each wet chemical process step. For isotropic and anisotropic etching, special clothing is required in the wet chemical area of a clean room.
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The developer line is mainly to be used for the UV-sensitive AZ coatings.
The draw frame consists of developer basin 1 with exhaust and di-water rinse. With developer basin 2 no suction only di-water rinsing, an integrated rinsing unit and integrated dryer centrifuge.
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The developer line is mainly to be used for the UV-sensitive AZ coatings.
The draw frame consists of developer basin 1 with exhaust and di-water rinse. With developer basin 2 no suction only di-water rinsing, an integrated rinsing unit and integrated dryer centrifuge.
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The rinser dryer is used to rinse wafers with ultra pure water and to dry wafers.
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The rinser-dryer is used to rinse wafers with ultrapure water and to dry wafers.
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This MicroProf® TTV surface tester from FRT is a profilometer for rapid optical topography measurement on surfaces. The surface is scanned by a focused light beam. This multi-sensor measuring device allows the non-contact determination of roughness, profile, flatness, topography, sample thickness, layer thickness and other surface parameters.
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This MicroProf® TTV surface tester from FRT is a profilometer for rapid optical topography measurement on surfaces. The surface is scanned by a focused light beam. This multi-sensor measuring device allows the non-contact determination of roughness, profile, flatness, topography, sample thickness, layer thickness and other surface parameters.
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This unit is used for burning out (burnout) and sintering (firing) the laminated ceramic green films to substrates as weil as for firing structures in postfiring on ceramic substrates.
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This unit is used for burning out (burnout) and sintering (firing) the laminated ceramic green films to substrates as weil as for firing structures in postfiring on ceramic substrates.
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Ultrasonic tanks are used for ultrasonic cleaning in the clean room. In addition to other processes, this is used to successfully clean the wafers brought into the cleanroom.
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With such heating plates with magnetic agitators, liquids can be mixed gently to intensively and, if required, heated quickly or tempered in a controlled manner.
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With such heating plates with magnetic agitators, liquids can be mixed gently to intensively and, if required, heated quickly or tempered in a controlled manner.
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With such heating plates with magnetic agitators, liquids can be mixed gently to intensively and, if required, heated quickly or tempered in a controlled manner.
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A horizontal swivel is used for the uniform transport and continuous mixing of an etching solution in the orded to be able to carry out an etching process under almost constant conditions.
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Coating system based on metal-organic chemical vapour deposition (MOCVD) for the growth of crystalline layers. The coating is carried out by means of a gaseous precursor which is fed into a reaction chamber where it reacts with other substances or the substrate to be coated and forms a solid layer.
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The SenResearch 4.0 spectral ellipsometer is a precise measuring instrument for determining coating thickness and optical constants. Ellipsometry is based on the use of polarized light and reading out the change in polarization properties after interaction with the sample and is used to characterize the optical sample properties, which is either in the form of a thin film or a solid.
Ellipsometric analysis provides other important information about material properties such as anisotropy, lattice vibrations, gradients, morphology, crystallinity, chemical composition and electrical conductivity.
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The SenResearch 4.0 spectral ellipsometer is a precise measuring instrument for determining coating thickness and optical constants. Ellipsometry is based on the use of polarized light and reading out the change in polarization properties after interaction with the sample and is used to characterize the optical sample properties, which is either in the form of a thin film or a solid.
Ellipsometric analysis provides other important information about material properties such as anisotropy, lattice vibrations, gradients, morphology, crystallinity, chemical composition and electrical conductivity.
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